technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com isolated diode array qualified per mil-prf-19500/474 t4-lds-0083 rev. 1 (082463) page 1 of 4 devices levels 1n6101 jan jantx jantxv description these low capacitance diode arrays are multiple, discrete, isolated junctions fabricated by a planar process and m ounted in a 16-pin package for use as steering diodes protecting up to eight i/o ports from esd, eft, or surge by directing them either to the positive side of the power supply line or to ground (see figure 1). an external tvs diode may be added between the positive supply line and ground to prevent overvoltage on the supply rail. they may also be used in fast switching core-driver applications . this includes computers and peripheral equipment such as magnetic cores, thin -film memories, plated-wire memories, etc., as well as decoding or encoding ap plications. these arrays offer many advantages of integrated circuits such as high-density packaging and improved reliability. this is a result of fewer pi ck and place operations, smaller footprint, smaller weight, and elimination of various discrete packages that may not be as user friendly in pc board mounting. important: for the most current data, consult microsemi?s website: http://www.microsemi.com features ? hermetic ceramic package ? isolated diodes to elimin ate cross-talk voltages ? high breakdown voltage v br > 75 v at 5 a ? low leakage i r < 100na at 40 v ? low capacitance c < 4.0 pf ? switching speeds less than 10 ns ? options for screening in accordance with mil-prf-19500/474 for jan, jantx, jantxv, the prefixes respectively to part numbers. 16-pin ceramic dip
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com isolated diode array qualified per mil-prf-19500/474 t4-lds-0083 rev. 1 (082463) page 2 of 4 applications / benefits ? high frequency data lines ? rs-232 & rs-422 interface networks ? ethernet: 10 base t ? computer i/o ports ? lan ? switching core drivers ? iec 61000-4 compatible (see circuit in figure 1) 61000-4-2 esd : air 15kv, contact 8kw 61000-4-4 (eft) : 40a ? 5/50 ns 61000-4-5 (surge): 12a 8/20 s maximum ratings ? reverse breakdown voltage 75 v (notes 1 & 2) ? continuous forward current 300 ma dc (notes 1 & 3) ? peak surge current (tp=1/120 s) of 500 ma dc (note 1) ? 400 mw power dissipation per junction @ 25 o c ? 600 mw power dissipation per package @ 25 o c (note 4) ? operating junction temperature range ?65 to +150 o c ? storage temperature range of ?65 to +200 o c note 1: each diode note 2: pulsed: p w = 100 ms max; duty cycle 20% note 3: derate at 2.4 ma/c above +25c note 4: derate at 4.8 mw/c above +25c mechanical and packaging ? 16-pin ceramic dip ? weight 2.09 grams (approximate) ? marking: logo, part number, date code ? pin #1 to the left of the indent on top of package ? carrier tubes; 25 pcs (standard)
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com isolated diode array qualified per mil-prf-19500/474 t4-lds-0083 rev. 1 (082463) page 3 of 4 electrical characteristi cs (per diode) @ 25 o c unless otherwise specified maximum forward voltage v f1 i f = 100 ma (note 1) maximum reverse current i r1 v r = 40 v maximum reverse current i r2 v r = 20 v maximum capacitance (pin to pin) c t v r = 0 v f = 1 mhz maximum forward recovery time t fr i f = 100 ma maximum reverse recovery time trr i f = i r = 10 madc i rr = 1 madc r l = 100 ohms maximumf orward voltage match v f5 i f = 10 ma part number v a na pf ns ns mv 1n6101 1 0.1 25 4.0 15 10 5 note 1: pulsed: p w = 300 s +/- 50 s, duty cycle 2%, 90 s after leading edge. symbols & definitions symbol definition v br minimum breakdown voltage: the minimum voltage th e device will exhibit at a specified current. v f maximum forward voltage: the maximum forward vo ltage the device will exhibit at a specified current. i r maximum leakage current: the maximu m leakage current that will flow at the specified voltage and temperature. c t capacitance: the capacitance of the diode as defined @ 0 volts at a frequency of 1 mhz and stated in picofarads.
technical data sheet 6 lake street, lawrence, ma 01841 1-800-446-1158 / (978) 620-2600 / fax: (978) 689-0803 website: http: //www.microsemi.com isolated diode array qualified per mil-prf-19500/474 t4-lds-0083 rev. 1 (082463) page 4 of 4 schematic circuit supply rail (+v cc ) gnd (or -v cc ) steering diode application figure 1 package dimensions i/o port .320 .290 .785 max .060 .015 .310 .220 .005 min .070 .030 .100 bsc .200 max .023 .014 .200 .100 1 2 3 4 5 6 7 89 10 11 12 13 14 15 16
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